SOI technology characterization using SOI-MOS capacitor

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dc.contributor.authorSonnenberg V.
dc.contributor.authorMartino J.A.
dc.date.accessioned2019-08-19T23:45:31Z
dc.date.available2019-08-19T23:45:31Z
dc.date.issued2005
dc.description.abstractIn this paper a set of simple methods is presented, to determine the main parameters of the silicon on insulator technology, using a thin film SOI-MOS capacitor. Methods to obtain the effective substrate doping concentration, substrate interface charge density and the buried oxide thickness using the two terminal SOI capacitor are presented. The front gate oxide thickness, the silicon film thickness, the silicon doping concentration and front and back interface charge density are obtained using a three terminal SOI-MOS capacitor. Bidimensional numerical simulations of SOI structure are performed for analyzing the high frequency capacitance vs. voltage curves and to test the proposed methods. These methods were applied experimentally and coherent results were found. © 2004 Elsevier Ltd. All rights reserved.
dc.description.firstpage109
dc.description.issuenumber1
dc.description.lastpage116
dc.description.volume49
dc.identifier.citationSONNENBERG, V.;SONNENBERG, V;Sonnenberg, Victor; MARTINO, J. SOI technology characterization using SOI-MOS capacitor. Solid-State Electronics, v. 49, n. 1, p. 109-116, 2005.
dc.identifier.doi10.1016/j.sse.2004.06.010
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1330
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageDoping concentration
dc.subject.otherlanguageElectrical characterization
dc.subject.otherlanguageOxide and silicon film thickness
dc.subject.otherlanguageOxide charge density
dc.subject.otherlanguageSOI technology
dc.subject.otherlanguageSOI-MOS capacitor
dc.titleSOI technology characterization using SOI-MOS capacitor
dc.typeArtigo
fei.scopus.citations11
fei.scopus.eid2-s2.0-9544241340
fei.scopus.subjectDoping concentration
fei.scopus.subjectElectrical characterization
fei.scopus.subjectOxide and silicon film thickness
fei.scopus.subjectOxide charge density
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=9544241340&origin=inward
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