Series resistance influence on the linear kink effect in twin-gate partially depleted SOI nMOSFETs

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dc.contributor.authorDER AGOPIAN, P. G.
dc.contributor.authorJoao Antonio Martino
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-8121-6513
dc.date.accessioned2023-08-26T23:50:23Z
dc.date.available2023-08-26T23:50:23Z
dc.date.issued2007-09-01
dc.description.abstractThis work elaborates on the influence of the series resistance on the linear kink effect (LKE) in twin-gate partially depleted (PD) Silicon-on-Insulator (SOI) nMOSFETs. The study is based on two-dimensional numerical simulations and is validated by experimental results. A relationship between the total resistance and the apparent mobility degradation factor is reported, showing that the twin-gate structure and a conventional SOI transistor with an external resistance both present a similar LKE reduction, The asymmetric behavior of the body potential with the interchange of the master and slave transistor of the twin-gate structure will be also shown. © 2006 The Electrochemical Society.
dc.description.firstpage293
dc.description.issuenumber1
dc.description.lastpage300
dc.description.volume4
dc.identifier.citationDER AGOPIAN, P. G.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Series resistance influence on the linear kink effect in twin-gate partially depleted SOI nMOSFETs, ECS Transactions, v. 4, n. 1, p. 293-300, sept. 2007.
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5032
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleSeries resistance influence on the linear kink effect in twin-gate partially depleted SOI nMOSFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-33847685134
fei.scopus.subjectLinear kink effect (LKE)
fei.scopus.subjectSeries resistance
fei.scopus.subjectTwin gate structure
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33847685134&origin=inward
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