Analytical Model for Low-Frequency Noise in Junctionless Nanowire Transistors

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dc.contributor.authorTREVISOLI, RENAN
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorCAPOVILLA, CARLOS EDUARDO
dc.contributor.authorBARRAUD, SYLVAIN
dc.contributor.authorDORIA, RODRIGO TREVISOLI
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:55:12Z
dc.date.available2022-01-12T21:55:12Z
dc.date.issued2020-24-24
dc.description.abstractThis article aims at proposing a compact analytical model for the low-frequency noise (LFN) of junctionless nanowire transistors (JNTs), operating at different bias conditions and temperatures. The model is validated through tridimensional numerical simulations, accounting for different trap configurations, as well as devices with different channel lengths, nanowire widths, and doping concentrations. Experimental results of short-channel junctionless transistors have also been used to demonstrate the model's applicability and accuracy.
dc.description.firstpage2536
dc.description.issuenumber6
dc.description.lastpage2543
dc.description.volume67
dc.identifier.citationTREVISOLI, R.; PAVANELLO, M. A.; CAPOVILLA, C. E.; BARRAUD, S.; DORIA, R. T. Analytical model for low-frequency noise in junctionless nanowire transistors. IEEE Transactions on Electron Devices, v. 67, n.6, p. 2536-2543, jun. 2020.
dc.identifier.doi10.1109/TED.2020.2986141
dc.identifier.issn1557-9646
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3643
dc.relation.ispartofIEEE Transactions on Electron Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalytical model
dc.subject.otherlanguageInterface traps
dc.subject.otherlanguageJunctionless
dc.subject.otherlanguageLow-frequency noise (LFN)
dc.subject.otherlanguageNanowires
dc.titleAnalytical Model for Low-Frequency Noise in Junctionless Nanowire Transistors
dc.typeArtigo
fei.scopus.citations4
fei.scopus.eid2-s2.0-85085554308
fei.scopus.subjectBias conditions
fei.scopus.subjectChannel length
fei.scopus.subjectDoping concentration
fei.scopus.subjectJunctionless transistors
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectNanowire transistors
fei.scopus.subjectShort channels
fei.scopus.updated2023-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85085554308&origin=inward
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