Study of Matching Properties of Graded-Channel SOI MOSFETs

dc.contributor.authorDE SOUZA, Michelly
dc.contributor.authorFLANDRE, Denis
dc.contributor.authorPAVANELLO, Marcelo A.
dc.date.accessioned2019-08-19T23:45:09Z
dc.date.available2019-08-19T23:45:09Z
dc.date.issued2008
dc.description.firstpage69
dc.description.issuenumber2
dc.description.lastpage75
dc.description.volume3
dc.identifier.citationDE SOUZA, Michelly; FLANDRE, Denis; PAVANELLO, Marcelo A.. Study of Matching Properties of Graded-Channel SOI MOSFETs. JICS. Journal of Integrated Circuits and Systems, v. 3, n. 2, p. 69-75, 2008.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1074
dc.relation.ispartofJICS. Journal of Integrated Circuits and Systems
dc.rightsAcesso Restrito
dc.titleStudy of Matching Properties of Graded-Channel SOI MOSFETspt_BR
dc.typeArtigopt_BR
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