Thermal neutron induced upsets in 28nm SRAM

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dc.contributor.authorAGUIAR, V. A. P.
dc.contributor.authorMEDINA, N. H.
dc.contributor.authorADDED, N.
dc.contributor.authorMACCHIONE, E. L. A.
dc.contributor.authorALBERTON, S. G.
dc.contributor.authorRODRIGUES, C. L.
dc.contributor.authorSILVA, T. F.
dc.contributor.authorZAHN, G. S.
dc.contributor.authorGENEZINI, F. A.
dc.contributor.authorMORALLES, M.
dc.contributor.authorBENEVENUTI, F.
dc.contributor.authorGUAZZELLI, Marcilei Aparecida
dc.date.accessioned2021-06-22T16:14:47Z
dc.date.available2021-06-22T16:14:47Z
dc.date.issued2019-01-01
dc.description.abstractIn this work, we present the first results of static tests in a 28nm SRAM under thermal neutron irradiation from the IPEN/IEA-R1 research reactor. The SRAM used was the configuration memory of a Xilinx Zynq-7000 FPGA and the ECC frame was used to detect bit-flips. It was obtained a SEU cross-section of 9.2(21) × 10−16 cm2/bit, corresponding to a FIT/Mb of 12(5), in accordance with expected results. The most probable cause of SEU in this device are 10B contamination on tungsten contacts.en
dc.description.firstpage1
dc.description.lastpage4
dc.description.volume1291
dc.identifier.citationAGUIAR, V A P; MORALLES, M; BENEVENUTI, F; GUAZZELLI, M. A. ; MEDINA, N H; ADDED, N; MACCHIONE, E L A; ALBERTON, S G; RODRIGUES, C L; SILVA, T F; ZAHN, G S; GENEZINI, F A. Thermal neutron induced upsets in 28nm SRAM. JOURNAL OF PHYSICS. CONFERENCE SERIES, v. 1291, p. 1-4, 2019.pt_BR
dc.identifier.doi10.1088/1742-6596/1291/1/012025pt_BR
dc.identifier.issn1742-6588
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3238
dc.language.isoenpt_BR
dc.relation.ispartofJOURNAL OF PHYSICS. CONFERENCE SERIES
dc.rightsAcesso Aberto
dc.rights.licenseCreative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY 3.0). Fonte: https://iopscience.iop.org/article/10.1088/1742-6596/1291/1/012025 Acesso em: 22 jun. 2021
dc.titleThermal neutron induced upsets in 28nm SRAMpt_BR
dc.typeArtigopt_BR
fei.scopus.citations2
fei.scopus.eid2-s2.0-85072105742
fei.scopus.updated2024-11-01
fei.source.urlhttps://iopscience.iop.org/article/10.1088/1742-6596/1291/1/012025
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