Reduced electric field in junctionless transistors

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dc.contributor.authorColinge, Jean-Pierre
dc.contributor.authorDORIA, R. T.;Doria, Rodrigo T.;Doria, Rodrigo Trevisoli;DORIA, R.T.;Rodrigo Doria, T.;DORIA, RODRIGO
dc.contributor.authorLee, Chi-Woo
dc.contributor.authorFerain, Isabelle
dc.contributor.authorAkhavan, Nima Dehdashti
dc.contributor.authorYan, Ran
dc.contributor.authorRazavi, Pedram
dc.contributor.authorYu, Ran
dc.contributor.authorNazarov, Alexei N.
dc.date.accessioned2019-08-19T23:45:26Z
dc.date.available2019-08-19T23:45:26Z
dc.date.issued2010
dc.description.firstpage073510
dc.description.volume96
dc.identifier.citationColinge, Jean-Pierre; DORIA, R. T.;Doria, Rodrigo T.;Doria, Rodrigo Trevisoli;DORIA, R.T.;Rodrigo Doria, T.;DORIA, RODRIGO; Lee, Chi-Woo; Ferain, Isabelle; Akhavan, Nima Dehdashti; Yan, Ran; Razavi, Pedram; Yu, Ran; Nazarov, Alexei N.. Reduced electric field in junctionless transistors. Applied Physics Letters, v. 96, p. 073510, 2010.
dc.identifier.doi10.1063/1.3299014
dc.identifier.issn0003-6951
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1283
dc.relation.ispartofApplied Physics Letters
dc.rightsAcesso Aberto
dc.titleReduced electric field in junctionless transistorspt_BR
dc.typeArtigopt_BR
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