Neutron-Induced Radiation Effects in UMOS Transistor

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dc.contributor.authorALBERTON. S. G.
dc.contributor.authorBOAS, A. C. V.
dc.contributor.authorMEDINA, N. H.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorAGUIAR, V. A. P.
dc.contributor.authorADDED, N.
dc.contributor.authorFEDERICO, C. A.
dc.contributor.authorGONZALEZ, O. L.
dc.contributor.authorCAVALCANTE, T. C.
dc.contributor.authorPEREIRA, E. C. F.
dc.contributor.authorVAZ, R. G.
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.date.accessioned2022-11-01T06:04:11Z
dc.date.available2022-11-01T06:04:11Z
dc.date.issued2022-01-05
dc.description.abstract© 2022 Institute of Physics Publishing. All rights reserved.Ground level electronics and avionics systems may suffer from radiation effects induced by neutrons. Neutrons can induce radiation effects in electronic devices via fusion-evaporation nuclear reactions, but few studies have been reported for technologies such as UMOSFET. In this work, estimates and experimental studies on neutron-induced radiation effects via nuclear reactions in a Si-based UMOSFET are presented. Methods for probability estimates of neutron-induced Single-Event Effects (SEEs) in Si-based power transistors and neutron beam energy measurement is presented. The energy spectrum of a UMOSFET subject to fast neutron irradiation was then compared to that of a high charge collection efficiency silicon particle detector.
dc.description.issuenumber1
dc.description.volume2340
dc.identifier.citationALBERTON. S. G.; BOAS, A. C. V.; MEDINA, N. H.; GUAZZELLI, M. A.; AGUIAR, V. A. P.; ADDED, N.; FEDERICO, C. A.; GONZALEZ, O. L.; CAVALCANTE, T. C.; PEREIRA, E. C. F.; VAZ, R. G. Neutron-Induced Radiation Effects in UMOS Transistor. Journal of Physics: Conference Series, v. 2340, n. 1, 2022.
dc.identifier.doi10.1088/1742-6596/2340/1/012046
dc.identifier.issn1742-6596
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4619
dc.relation.ispartofJournal of Physics: Conference Series
dc.rightsAcesso Aberto
dc.titleNeutron-Induced Radiation Effects in UMOS Transistor
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-85140232977
fei.scopus.subjectAvionic systems
fei.scopus.subjectBeam energy measurement
fei.scopus.subjectElectronics devices
fei.scopus.subjectElectronics system
fei.scopus.subjectEnergy spectrum
fei.scopus.subjectFusion evaporation
fei.scopus.subjectGround level
fei.scopus.subjectProbability estimate
fei.scopus.subjectSi-based
fei.scopus.subjectSingle event effects
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85140232977&origin=inward
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