Comparative experimental study between diamond and conventional MOSFET

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dc.contributor.authorSalvador Gimenez
dc.contributor.authorALATI, D.M.
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2022-01-12T22:03:47Z
dc.date.available2022-01-12T22:03:47Z
dc.date.issued2010-01-05
dc.description.abstractThe focus of this work is to perform the experimental comparative study between Diamond and the conventional MOSFET counterpart in order to verify the benefits observed by three dimensional numerical simulations, considering the same geometric factor, die area and bias conditions, as described in first publication of Diamond style layout. The devices were manufactured by using the commercial manufacture CMOS process from 0.35μm AMI (On-Semiconductor) that is available in MOSIS Educational Program (MEP). The experimental results prove that Diamond MOSFET presents a better performance than one found in equivalent conventional transistor, except in relation to the Early voltage, due the higher impact ionization in the drain region than one observed in the conventional counterpart. Therefore the Diamond layout style is an important alternative to improve the performance of the analog, current drivers and pass switches integrated circuits applications. ©The Electrochemical Society.
dc.description.firstpage121
dc.description.issuenumber6
dc.description.lastpage132
dc.description.volume33
dc.identifier.citationGIMEMEZ, S.; ALATI, D.M. Comparative experimental study between diamond and conventional MOSFET. ECS Transactions, v. 33, n. 6, p. 121-132, Jan. 2010.
dc.identifier.doi10.1149/1.3487540
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4227
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleComparative experimental study between diamond and conventional MOSFET
dc.typeArtigo de evento
fei.scopus.citations10
fei.scopus.eid2-s2.0-79952677663
fei.scopus.subjectBias conditions
fei.scopus.subjectCMOS processs
fei.scopus.subjectComparative studies
fei.scopus.subjectConventional transistors
fei.scopus.subjectCurrent drivers
fei.scopus.subjectDie area
fei.scopus.subjectDrain region
fei.scopus.subjectEarly voltage
fei.scopus.subjectEducational program
fei.scopus.subjectExperimental studies
fei.scopus.subjectGeometric factors
fei.scopus.subjectMOS-FET
fei.scopus.subjectPass switch
fei.scopus.subjectThree-dimensional numerical simulations
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79952677663&origin=inward
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