Sidewall angle influence on the FinFET analog parameters

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dc.contributor.authorRenato Giacomini
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.date.accessioned2022-01-12T22:05:21Z
dc.date.available2022-01-12T22:05:21Z
dc.date.issued2007-09-06
dc.description.abstractThe width variations along the vertical direction, due to process limitations, that appear in some fabricated FinFETs lead to non-rectangular cross-sectional shapes. One of the most frequent shapes is the trapezoidal (inclined sidewalls). These geometry variations may cause some changes in the device electrical characteristics. This work analyses the influence of the sidewall inclination angle on analog parameters, such as voltage gain, transconductance, output conductance, threshold voltage and also on the corner effects, through 3-D numeric simulation. © The Electrochemical Society.
dc.description.firstpage37
dc.description.issuenumber1
dc.description.lastpage45
dc.description.volume9
dc.identifier.citationGIACOMINI, R.; MARTINO, J. A.; PAVANELLO, M. A. Sidewall angle influence on the FinFET analog parameters. ECS Transactions, v. 9, n. 1, p. 37-45, Sept. 2007.
dc.identifier.doi10.1149/1.2766872
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4333
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleSidewall angle influence on the FinFET analog parameters
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-45249092758
fei.scopus.subject(e ,3e) process
fei.scopus.subjectAnalog parameters
fei.scopus.subjectCorner effects
fei.scopus.subjectCross-sectional shapes
fei.scopus.subjectElectrical characteristics
fei.scopus.subjectElectrochemical Society (ECS)
fei.scopus.subjectFinFETs
fei.scopus.subjectGeometry variations
fei.scopus.subjectinclination angles
fei.scopus.subjectMicroelectronics technology
fei.scopus.subjectnumeric simulation
fei.scopus.subjectOutput conductance
fei.scopus.subjectSidewall angles
fei.scopus.subjectVertical directions
fei.scopus.subjectVoltage gain
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=45249092758&origin=inward
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