Numerical simulation and analysis of transistor channel length and doping mismatching in GC SOI nMOSFETs analog figures of merit

Abstract

© 2018 IEEE.This paper presents a two-dimensional numerical simulation study of mismatching on the analog characteristics of fully-depleted graded-channel (GC) SOI MOSFET. The study aims at identifying the mismatching sources that affect the analog performance of GC SOI transistors. The simulations were performed imposing length and doping concentration variations and analyzing its impact on important electrical parameters such as threshold voltage and subthreshold slope, as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.