Numerical simulation and analysis of transistor channel length and doping mismatching in GC SOI nMOSFETs analog figures of merit

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dc.contributor.authorALVES, C. R.
dc.contributor.authorMichelly De Souza
dc.contributor.authorFLANDRE, D.
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T21:57:04Z
dc.date.available2022-01-12T21:57:04Z
dc.date.issued2018-08-31
dc.description.abstract© 2018 IEEE.This paper presents a two-dimensional numerical simulation study of mismatching on the analog characteristics of fully-depleted graded-channel (GC) SOI MOSFET. The study aims at identifying the mismatching sources that affect the analog performance of GC SOI transistors. The simulations were performed imposing length and doping concentration variations and analyzing its impact on important electrical parameters such as threshold voltage and subthreshold slope, as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.
dc.identifier.citationALVES, C. R.; DE SOUZA, M.; FLANDRE, D. Numerical simulation and analysis of transistor channel length and doping mismatching in GC SOI nMOSFETs analog figures of merit. 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018, Aug. 2018.
dc.identifier.citationALVES, C. R.; DE SOUZA, M.; FLANDRE, D. Numerical simulation and analysis of transistor channel length and doping mismatching in GC SOI nMOSFETs analog figures of merit. 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018, Aug. 2018.
dc.identifier.doi10.1109/SBMicro.2018.8511560
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3768
dc.relation.ispartof33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018
dc.rightsAcesso Restrito
dc.subject.otherlanguageGraded-channel transistor
dc.subject.otherlanguageMismatching
dc.subject.otherlanguageNumerical simulations
dc.subject.otherlanguageSOI MOSFET
dc.titleNumerical simulation and analysis of transistor channel length and doping mismatching in GC SOI nMOSFETs analog figures of merit
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-85057409094
fei.scopus.subjectAnalog figures of merits
fei.scopus.subjectDoping concentration
fei.scopus.subjectGraded channels
fei.scopus.subjectIntrinsic voltage gains
fei.scopus.subjectMismatching
fei.scopus.subjectSimulation and analysis
fei.scopus.subjectSOI-MOSFETs
fei.scopus.subjectTwo-dimensional numerical simulation
fei.scopus.updated2024-08-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85057409094&origin=inward
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