Graded-channel SOI nMOSFET model valid for harmonic distortion evaluation

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dc.contributor.authorMichelly De Souza
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorCERDEIRA, A.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-04-01T06:07:01Z
dc.date.available2022-04-01T06:07:01Z
dc.date.issued2006-05-17
dc.description.abstractIn this paper an evaluation of the harmonic distortion of graded-channel SOI nMOSFETs is performed. The analysis is carried out by comparing an analytical continuous model and experimental results. The total harmonic distortion, as well as the third and second order terms are used as figures of merit in this comparison. It is shown that GC SOI devices present better gain and linearity behavior than conventional devices and that these advantages are well described by the proposed analytical model. The results show that the proposed set of equations is able to describe the linearity behavior of GC devices, indicating its potential to be used in analog circuit simulation and design. © 2006 IEEE.
dc.description.firstpage476
dc.description.lastpage479
dc.identifier.citationDE SOUZA, M.; PAVANELLO, M. A.; CERDEIRA, A.; FLANDRE, D.Graded-channel SOI nMOSFET model valid for harmonic distortion evaluation. 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, Mayo, 2006.
dc.identifier.doi10.1109/ICMEL.2006.1651005
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4469
dc.relation.ispartof2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
dc.rightsAcesso Restrito
dc.titleGraded-channel SOI nMOSFET model valid for harmonic distortion evaluation
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-77956527210
fei.scopus.subjectContinuous modeling
fei.scopus.subjectFigures of merits
fei.scopus.subjectGraded channels
fei.scopus.subjectGraded-channel SOI nMOSFET
fei.scopus.subjectSecond orders
fei.scopus.subjectSOI devices
fei.scopus.subjectSOI n-MOSFETs
fei.scopus.subjectTotal harmonic distortion (THD)
fei.scopus.updated2024-08-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77956527210&origin=inward
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