Analytical model for the dynamic behavior of triple-gate junctionless nanowire transistors

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dc.contributor.authorTrevisoli R.
dc.contributor.authorDoria R.T.
dc.contributor.authorDe Souza M.
dc.contributor.authorBarraud S.
dc.contributor.authorVinet M.
dc.contributor.authorPavanello M.A.
dc.date.accessioned2019-08-19T23:45:11Z
dc.date.available2019-08-19T23:45:11Z
dc.date.issued2016
dc.description.abstract© 2015 IEEE.This paper presents an analytical model for the intrinsic capacitances and transconductances of triple-gate junctionless nanowire transistors. The model is based on a surface-potential drain current model, which includes shortchannel effects, and accounts for the dependences on the device dimensions, doping concentration, and quantum effects. It is validated with 3-D Technology Computer-Aided Design (TCAD) simulations for several device characteristics and biases as well as with the experimental results.
dc.description.firstpage856
dc.description.issuenumber2
dc.description.lastpage863
dc.description.volume63
dc.identifier.citationTREVISOLI, RENAN; Doria, Rodrigo Trevisoli; DE SOUZA, Michelly; BARRAUD, SYLVAIN; VINET, MAUD; Pavanello, Marcelo Antonio. Analytical Model for the Dynamic Behavior of Triple-Gate Junctionless Nanowire Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 63, n. 2, p. 856-863, 2016.
dc.identifier.doi10.1109/TED.2015.2507571
dc.identifier.issn0018-9383
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1112
dc.relation.ispartofIEEE Transactions on Electron Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageIntrinsic capacitances
dc.subject.otherlanguageJunctionless nanowire transistors (JNTs)
dc.subject.otherlanguageModeling
dc.subject.otherlanguageTransconductances
dc.titleAnalytical model for the dynamic behavior of triple-gate junctionless nanowire transistors
dc.typeArtigo
fei.scopus.citations21
fei.scopus.eid2-s2.0-84958231575
fei.scopus.subjectDevice characteristics
fei.scopus.subjectDoping concentration
fei.scopus.subjectDrain current models
fei.scopus.subjectDynamic behaviors
fei.scopus.subjectIntrinsic capacitance
fei.scopus.subjectNanowire transistors
fei.scopus.subjectShort-channel effect
fei.scopus.subjectTechnology computer aided design
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84958231575&origin=inward
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