Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorRIBEIRO, THALES AUGUSTO
dc.contributor.authorBARRAUD, SYLVAIN
dc.contributor.authorMarcelo Antonio Pavanello
dc.date.accessioned2022-01-12T21:54:33Z
dc.date.available2022-01-12T21:54:33Z
dc.date.issued2021-01-04
dc.description.abstractThis work studies the effects of the temperature variation, from 300K to 500K, on the electrical parameters of SOI n-type and p-type junctionless nanowire transistors. The temperature influence on the threshold voltage, subthreshold slope, and the effective carrier mobility were analyzed. The mobility scattering mechanisms were analyzed and show that nanowire devices have the phonon scattering as their major component, although there is a significant component of the ionized impurity scattering that can be identified as well. These electrical parameters were also analyzed for short channel devices with a channel length of 40nm. P-type devices showed higher degradation with the temperature as the doping concentration is higher than n-type devices.
dc.description.firstpage492
dc.description.lastpage499
dc.description.volume9
dc.identifier.citationRIBEIRO, T. A.; BARRAUD, S.; MARCELO A. P. Analysis of the electrical parameters of soi junctionless nanowire transistors at high temperatures. IEEE Journal of the Electron Devices Society, v. 9, p. 492-499, 2021.
dc.identifier.doi10.1109/JEDS.2021.3051500
dc.identifier.issn2168-6734
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3606
dc.relation.ispartofIEEE Journal of the Electron Devices Society
dc.rightsAcesso Aberto
dc.rights.licenseCreative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative commons (CC BY 4.0). Fonte: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85099585722&origin=inward. Acesso em: 20 jan. 2022.
dc.subject.otherlanguageCarrier mobility
dc.subject.otherlanguageHigh temperature
dc.subject.otherlanguageJunctionless
dc.subject.otherlanguageNanowires
dc.subject.otherlanguageSOI
dc.subject.otherlanguageSubthreshold slope
dc.subject.otherlanguageThreshold voltage
dc.titleAnalysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures
dc.typeArtigo
fei.scopus.citations3
fei.scopus.eid2-s2.0-85099585722
fei.scopus.subjectDoping concentration
fei.scopus.subjectEffective carrier mobility
fei.scopus.subjectElectrical parameter
fei.scopus.subjectIonized impurity scattering
fei.scopus.subjectNanowire transistors
fei.scopus.subjectShort-channel devices
fei.scopus.subjectTemperature influence
fei.scopus.subjectTemperature variation
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85099585722&origin=inward
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