Using the wave layout style to boost the digital ICs electrical performance in the radioactive environment

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dc.contributor.authorNavarenho-De-Souza R.
dc.contributor.authorSilveira M.A.G.
dc.contributor.authorGimenez S.P.
dc.date.accessioned2019-08-19T23:47:19Z
dc.date.available2019-08-19T23:47:19Z
dc.date.issued2015
dc.description.abstract© The Electrochemical Society.This paper presents an experimental comparative study between the Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) manufactured with the Wave ("S" gate geometry) and the standard layout (CnM) considering the Total Ionizing Dose (TID) effects and taking into account that the devices were biased during the radiation procedure to emphasize the effects. Due to the special layout characteristics and the different effects of the bird's beaks regions of the Wave MOSFET (WnM) compared to the conventional rectangular layout, this innovative layout proposal for MOSFETs is able to improve the device TID tolerance without adding cost to the Complementary MOS (CMOS) manufacturing process.
dc.description.firstpage71
dc.description.issuenumber5
dc.description.lastpage78
dc.description.volume66
dc.identifier.citationNAVARENHO DE SOUZA, R.; GUAZZELI DA SILVEIRA, M.; Gimenez, S. P.. Using the Wave Layout Style to Boost the Digital ICs Electrical Performance in the Radioactive Environment. ECS Transactions (Online), v. 66, n. 5, p. 71-78, 2015.
dc.identifier.doi10.1149/06605.0071ecst
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1460
dc.relation.ispartofECS Transactions
dc.rightsAcesso Aberto
dc.titleUsing the wave layout style to boost the digital ICs electrical performance in the radioactive environment
dc.typeArtigo de evento
fei.scopus.citations4
fei.scopus.eid2-s2.0-84931425612
fei.scopus.subjectComparative studies
fei.scopus.subjectDifferent effects
fei.scopus.subjectElectrical performance
fei.scopus.subjectGate geometry
fei.scopus.subjectManufacturing process
fei.scopus.subjectMOS-FET
fei.scopus.subjectRadioactive environment
fei.scopus.subjectTotal ionizing dose effects
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84931425612&origin=inward
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