A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor

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dc.contributor.authorPERIN, A. L.
dc.contributor.authorPEREIRA, A. S. N.
dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorGIACOMINI, R.
dc.date.accessioned2019-08-19T23:45:14Z
dc.date.available2019-08-19T23:45:14Z
dc.date.issued2012
dc.description.firstpage100
dc.description.issuenumber2
dc.description.lastpage106
dc.description.volume7
dc.identifier.citationPERIN, A. L.; PEREIRA, A. S. N.; AGOPIAN, P. G. D.; MARTINO, J. A.; GIACOMINI, R.. A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 7, n. 2, p. 100-106, 2012.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1148
dc.relation.ispartofJICS. Journal of Integrated Circuits and Systems (Ed. Português)
dc.rightsAcesso Restrito
dc.titleA Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistorpt_BR
dc.typeArtigopt_BR
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