Analysis of p-type Junctionless nanowire transistors with different crystallographic orientations
dc.contributor.author | TREVISOLLI, R. | |
dc.contributor.author | Rodrigo Doria | |
dc.contributor.author | Michelly De Souza | |
dc.contributor.author | Marcelo Antonio Pavanello | |
dc.contributor.authorOrcid | https://orcid.org/0000-0003-4448-4337 | |
dc.contributor.authorOrcid | https://orcid.org/0000-0001-6472-4807 | |
dc.contributor.authorOrcid | https://orcid.org/0000-0003-1361-3650 | |
dc.date.accessioned | 2022-01-12T21:57:50Z | |
dc.date.available | 2022-01-12T21:57:50Z | |
dc.date.issued | 2017-07-28 | |
dc.description.abstract | © 2017 IEEE.This work presents an analysis of the influence of the crystal orientation on the performance of p-type Junctionless Nanowire Transistors. The main electrical parameters, such as threshold voltage, transconductance and subthreshold slope, were analyzed by means of experimental data, demonstrating that the substrate rotation can significantly worsen the electrical behavior of these devices. | |
dc.identifier.citation | TREVISOLLI, R.; DORIA, R.; DE SOUZA, M.; PAVANELLO, M. A. Analysis of p-type Junctionless nanowire transistors with different crystallographic orientations. Analysis of p-type Junctionless nanowire transistors with different crystallographic orientations, 2017. | |
dc.identifier.doi | 10.1109/SBMicro.2017.8112988 | |
dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/3821 | |
dc.relation.ispartof | SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum | |
dc.rights | Acesso Restrito | |
dc.subject.otherlanguage | Crystallographic Orientation | |
dc.subject.otherlanguage | Junctionless Transistors | |
dc.subject.otherlanguage | Parameter Extraction | |
dc.title | Analysis of p-type Junctionless nanowire transistors with different crystallographic orientations | |
dc.type | Artigo de evento | |
fei.scopus.citations | 1 | |
fei.scopus.eid | 2-s2.0-85040617786 | |
fei.scopus.subject | Crystallographic orientations | |
fei.scopus.subject | Electrical behaviors | |
fei.scopus.subject | Electrical parameter | |
fei.scopus.subject | Junctionless transistors | |
fei.scopus.subject | Nanowire transistors | |
fei.scopus.subject | P-type | |
fei.scopus.subject | Substrate rotation | |
fei.scopus.subject | Subthreshold slope | |
fei.scopus.updated | 2024-07-01 | |
fei.scopus.url | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85040617786&origin=inward |