Boosting the ionizing radiation tolerance in the mosfets matching by using diamond layout style

dc.contributor.authorPERUZZI, V. V.
dc.contributor.authorCRUZ, W. S. D.
dc.contributor.authorSILVA, G. A. D.
dc.contributor.authorTEIXEIRA, R. C.
dc.contributor.authorSEIXAS JUNIOR, L. E.
dc.contributor.authorSalvador Gimenez
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2022-01-12T21:56:18Z
dc.date.available2022-01-12T21:56:18Z
dc.date.issued2019-08-30
dc.description.abstract© 2019 IEEE.There are a lot of initiatives to improve the devices matching (dog bone layout, common centroid layout, dummy devices, etc.). Another layout technique, not yet used by integrated circuits (ICs) companies, is the utilization of non-conventional layout styles (hexagonal, octagonal, ellipsoidal, etc.) for MOSFETs, thanks to the Longitudinal Corner Effect (LCE), Parallel Connection of MOSFETs with different channel Lengths Effect (PAMDLE) and Deactivation of Parasitic MOSFETs in Bird's Beaks Regions (DEMPAMBBRE). In this context, this paper describes an experimental comparative study of the devices matching of Metal-Oxide-Semiconductor Field Effect Transistors (130 nm Silicon-Germanium Bulk), n-type (nMOSFETs) implemented with Diamond (hexagonal) and standard rectangular layout styles, regarding a sample of 189 transistors which were exposure to different X-rays ionizing radiations. Considering some relevant electrical parameters considered in this work, the results indicate that the Diamond layout style with α angle equal to 90° is capable of boosting by at least 40% the device matching in relation to one observed with standard (rectangular) MOSFET counterparts in irradiation environment, considering they present the same gate areas, channel widths and bias conditions. Therefore, the Diamond layout style can be considered another hardness-by-design (HBD) layout strategy to boost the electrical performance and ionizing radiation tolerance of MOSFETs.
dc.identifier.citationPERUZZI, V. V.; CRUZ, W. S. D.; SILVA, G. A. D.; TEIXEIRA, R. C.; SEIXAS JUNIOR, L. E.; GIMENEZ, S. Boosting the ionizing radiation tolerance in the mosfets matching by using diamond layout style. SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices, Aug. 2019.
dc.identifier.doi10.1109/SBMicro.2019.8919344
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3716
dc.relation.ispartofSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageanalog CMOS ICs
dc.subject.otherlanguageDevices Matching
dc.subject.otherlanguagenew layouts of MOSFETs
dc.subject.otherlanguagenMOSFETs
dc.titleBoosting the ionizing radiation tolerance in the mosfets matching by using diamond layout style
dc.typeArtigo de evento
fei.scopus.citations4
fei.scopus.eid2-s2.0-85077221162
fei.scopus.subjectAnalog CMOS
fei.scopus.subjectDevices Matching
fei.scopus.subjectElectrical performance
fei.scopus.subjectIntegrated circuits (ICs)
fei.scopus.subjectMOSFETs
fei.scopus.subjectnMOSFETs
fei.scopus.subjectParallel connections
fei.scopus.subjectRadiation tolerances
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85077221162&origin=inward
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