Effect of the back bias on the analog performance of standard FD and UTBB transistors-based self-cascode structures

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dc.contributor.authorDoria R.T.
dc.contributor.authorFlandre D.
dc.contributor.authorTrevisoli R.
dc.contributor.authorDe Souza M.
dc.contributor.authorPavanello M.A.
dc.date.accessioned2019-08-19T23:45:13Z
dc.date.available2019-08-19T23:45:13Z
dc.date.issued2017
dc.description.abstract© 2017 IOP Publishing Ltd.This work demonstrates that active back biasing can improve significantly the analog performance of two-transistors self-cascode structures. The study was performed by applying both standard and UTBB fully depleted (FD) SOI MOSFETs to the structures and has shown that a voltage gain improvement of about 7 dB is obtained when a forward back bias is applied to the drain-sided transistor of standard FD devices-based structure. In the case of UTBB transistors, an improvement larger than 5 dB of the output voltage gain is shown depending on the back bias applied to both n- or p-type devices. Finally, it is shown that the mirroring precision of current mirrors composed by SC structures can be more than 20% better than the one composed by single devices and the improvement is better when adequate back bias is applied.
dc.description.firstpage1
dc.description.issuenumber9
dc.description.lastpage10
dc.description.volume32
dc.identifier.citationDORIA, R.T.; FLANDRE, D.; TREVISOLI, R D; DE SOUZA, Michelly; PAVANELLO, M. A.. Effect of the Back Bias on the Analog Performance of Standard FD and UTBB Transistors-Based Self-Cascode Structures. Semiconductor Science and Technology, v. 32, p. 1-10, 2017.
dc.identifier.doi10.1088/1361-6641/aa7659
dc.identifier.issn1361-6641
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1129
dc.relation.ispartofSemiconductor Science and Technology
dc.rightsAcesso Restrito
dc.subject.otherlanguagecurrent mirrors
dc.subject.otherlanguageself-cascode
dc.subject.otherlanguagesilicon-on-insulator
dc.subject.otherlanguageUTBB
dc.titleEffect of the back bias on the analog performance of standard FD and UTBB transistors-based self-cascode structures
dc.typeArtigo
fei.scopus.citations3
fei.scopus.eid2-s2.0-85028755305
fei.scopus.subjectAnalog performance
fei.scopus.subjectCurrent mirrors
fei.scopus.subjectFully depleted
fei.scopus.subjectOutput voltages
fei.scopus.subjectSC structures
fei.scopus.subjectSelf-cascode
fei.scopus.subjectUTBB
fei.scopus.subjectVoltage gain
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85028755305&origin=inward
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