On the Application of Junctionless Nanowire Transistors in Basic Analog Building Blocks

dc.contributor.authorMichelly De Souza
dc.contributor.authorDORIA, R.T.
dc.contributor.authorTREVISOLI, R.
dc.contributor.authorBARRAUD, S.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T21:54:29Z
dc.date.available2022-01-12T21:54:29Z
dc.date.issued2021-01-05
dc.description.abstractIn this work an evaluation of analog building blocks using junctionless nanowire transistors is presented. This analysis has been carried out through experimental measurements of junctionless nMOS transistors configured as two amplifier stages composed by single transistors, namely the common-source and the common-drain amplifiers. The performance of junctionless devices is evaluated as a function of channel length, nanowire width, doping concentration and bias condition, taking as figures of merit the voltage gain, linearity and, in the case of the common drain amplifier, the input voltage range. The obtained results indicate that these two basic analog blocks can be benefitted by the use of junctionless devices, providing nearly ideal voltage gain when configured as common-drain amplifier, and improvement on voltage gain and linearity with device narrowing in the case of the common-source amplifier.
dc.description.firstpage234
dc.description.lastpage242
dc.description.volume20
dc.identifier.citationDE SOUZA, M.; DORIA, R.T.; TREVISOLI, R.; BARRAUD, S.; PAVANELLO, M. A. On the Application of Junctionless Nanowire Transistors in Basic Analog Building Blocks. IEEE Transactions on Nanotechnology, v. 20, p. 234-242, 2021.
dc.identifier.doi10.1109/TNANO.2021.3058885
dc.identifier.issn1941-0085
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3603
dc.relation.ispartofIEEE Transactions on Nanotechnology
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalog circuits
dc.subject.otherlanguageCommon-drain amplifier
dc.subject.otherlanguageCommon-source amplifier
dc.subject.otherlanguageJunctionless nanowire transistors
dc.subject.otherlanguageMOSFET
dc.subject.otherlanguageSilicon-on-insulator
dc.subject.otherlanguageSource-follower
dc.titleOn the Application of Junctionless Nanowire Transistors in Basic Analog Building Blocks
dc.typeArtigo
fei.scopus.citations4
fei.scopus.eid2-s2.0-85100854458
fei.scopus.subjectCommon source amplifier
fei.scopus.subjectDoping concentration
fei.scopus.subjectFigures of merits
fei.scopus.subjectInput voltage ranges
fei.scopus.subjectJunctionless devices
fei.scopus.subjectNanowire transistors
fei.scopus.subjectNMOS transistors
fei.scopus.subjectSingle transistors
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85100854458&origin=inward
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