An explicit multi-exponential model for semiconductor junctions with series and shunt resistances

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dc.contributor.authorLugo-Munoz D.
dc.contributor.authorMuci J.
dc.contributor.authorOrtiz-Conde A.
dc.contributor.authorGarcia-Sanchez F.J.
dc.contributor.authorSouza M.D.
dc.contributor.authorPavanello M.A.
dc.date.accessioned2019-08-19T23:45:10Z
dc.date.available2019-08-19T23:45:10Z
dc.date.issued2011
dc.description.abstractAn alternative explicit multi-exponential model is proposed to describe multiple, arbitrary ideality factor, conduction mechanisms in semiconductor junctions with parasitic series and shunt resistances. This Lambert function based model allows the terminal current to be expressed as an explicit analytical function of the applied terminal voltage, in contrast to the implicit-type conventional multi-exponential model. As a result this model inherently offers a higher computational efficiency than conventional models, making it better suited for repetitive simulation and parameter extraction applications. Its explicit nature also allows direct analytic differentiation and integration. The model's applicability has been assessed by parameter extraction and subsequent playback using synthetic and experimental diode forward I-V characteristics. © 2011 Elsevier Ltd. All rights reserved.
dc.description.firstpage2044
dc.description.issuenumber12
dc.description.lastpage2048
dc.description.volume51
dc.identifier.citationLugo-Muñoz, Denise; MUCI, Juan; ORTIZ-CONDE, Adelmo; García-Sánchez, Francisco J.; DE SOUZA, Michelly; PAVANELLO, Marcelo A.; Pavanello, Marcelo A.. An explicit multi-exponential model for semiconductor junctions with series and shunt resistances. Microelectronics and Reliability, v. 51, n. 12, p. 2044-2048, 2011.
dc.identifier.doi10.1016/j.microrel.2011.06.030
dc.identifier.issn0026-2714
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1088
dc.relation.ispartofMicroelectronics Reliability
dc.rightsAcesso Restrito
dc.titleAn explicit multi-exponential model for semiconductor junctions with series and shunt resistances
dc.typeArtigo
fei.scopus.citations28
fei.scopus.eid2-s2.0-81855176121
fei.scopus.subjectAnalytical functions
fei.scopus.subjectConduction Mechanism
fei.scopus.subjectConventional models
fei.scopus.subjectIdeality factors
fei.scopus.subjectIV characteristics
fei.scopus.subjectLambert function
fei.scopus.subjectMulti-exponential model
fei.scopus.subjectParasitic series
fei.scopus.subjectSeries and shunt resistances
fei.scopus.subjectTerminal currents
fei.scopus.subjectTerminal voltages
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=81855176121&origin=inward
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