The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime

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dc.contributor.authorDORIA, Rodrigo Trevisoli
dc.contributor.authorTREVISOLI, Renan Doria
dc.contributor.authorDE SOUZA, Michelly
dc.contributor.authorCUETO, Magali Estrada
dc.contributor.authorCERDEIRA, Antonio
dc.contributor.authorPavanello, Marcelo Antonio
dc.date.accessioned2019-08-19T23:45:11Z
dc.date.available2019-08-19T23:45:11Z
dc.date.issued2014
dc.description.firstpage110
dc.description.issuenumber2
dc.description.lastpage117
dc.description.volume9
dc.identifier.citationDORIA, Rodrigo Trevisoli; TREVISOLI, Renan Doria; DE SOUZA, Michelly; CUETO, Magali Estrada; CERDEIRA, Antonio; Pavanello, Marcelo Antonio. The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 9, n. 2, p. 110-117, 2014.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1105
dc.relation.ispartofJICS. Journal of Integrated Circuits and Systems (Ed. Português)
dc.rightsAcesso Restrito
dc.titleThe Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regimept_BR
dc.typeArtigopt_BR
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