Heavy-Ion-Induced Avalanche Multiplication in Low-Voltage Power VDMosfet

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dc.contributor.authorALBERTON. S. G.
dc.contributor.authorMEDINA, N. H.
dc.contributor.authorADDED, N.
dc.contributor.authorAGUIAR, V. A. P.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorRoberto Santos
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.date.accessioned2023-01-01T06:03:44Z
dc.date.available2023-01-01T06:03:44Z
dc.date.issued2021-09-13
dc.description.abstract© 2021 IEEE.Lackner's theory for avalanche multiplication in semiconductor devices provides physical interpretation for the model parameters and obtaining them through experimental methods is necessary. In this work, the charge collection mechanisms of heavy-ion-induced avalanche multiplication in power MOSFETs are studied based on Lackner's impact ionization model. The heavy-ion-induced impact ionization coefficients were estimated by comparing collected charge values obtained from computational simulations and experimental measurements.
dc.identifier.citationALBERTON. S. G.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; GUAZZELLI, M. A.; SANTOS, R. Heavy-Ion-Induced Avalanche Multiplication in Low-Voltage Power VDMosfet. RADECS 2021 - European Conference on Radiation and its Effects on Components and Systems, sept. 2021.
dc.identifier.doi10.1109/RADECS53308.2021.9954563
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4672
dc.relation.ispartofRADECS 2021 - European Conference on Radiation and its Effects on Components and Systems
dc.rightsAcesso Restrito
dc.subject.otherlanguageAvalanche multiplication
dc.subject.otherlanguageheavy-ion
dc.subject.otherlanguagehigh-injection
dc.subject.otherlanguageionization impact
dc.subject.otherlanguagepower MOSFET
dc.subject.otherlanguageSingle-Event Effects
dc.titleHeavy-Ion-Induced Avalanche Multiplication in Low-Voltage Power VDMosfet
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-85143903256
fei.scopus.subjectAvalanche multiplication
fei.scopus.subjectCharge collection
fei.scopus.subjectExperimental methods
fei.scopus.subjectHigh injection
fei.scopus.subjectLow voltages
fei.scopus.subjectModeling parameters
fei.scopus.subjectPhysical interpretation
fei.scopus.subjectPower
fei.scopus.subjectSingle event effects
fei.scopus.subjectVdmosfets
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85143903256&origin=inward
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