Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs

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dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorROOYACKERS, R.
dc.contributor.authorCOLLAERT, N.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:04:49Z
dc.date.available2022-01-12T22:04:49Z
dc.date.issued2008-09-04
dc.description.abstractThis work studies the influence of the fin width on the intrinsic voltage gain of standard and strained Si (sSOI) n-type triple-gate FinFETs with high-k dielectrics and metal gate. It is demonstrated that independent of the fin width the application of strain improves the device transconductance. On the other hand, the device output conductance shows a high dependence on the fin width in strained FinFETs with respect to standard ones. The output conductance degrades if narrow fins are used and improves for wide fins. Narrow strained FinFETs show a degradation of the Early voltage compared to standard ones suggesting that strained devices are more subjected to the channel length modulation effect. © The Electrochemical Society.
dc.description.firstpage253
dc.description.issuenumber1
dc.description.lastpage261
dc.description.volume14
dc.identifier.citationPAVANELLO, M. A.; MARTINO, J. A.; SIMOEN, E.; ROOYACKERS, R.; COLLAERT, N.; CLAEYS, C. Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs. ECS Transactions, v. 14, n. 1, p. 253-261, Sept. 2009.
dc.identifier.doi10.1149/1.2956039
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4297
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleInfluence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-57749170945
fei.scopus.subjectChannel length modulations
fei.scopus.subjectEarly voltages
fei.scopus.subjectFin widths
fei.scopus.subjectFinfets
fei.scopus.subjectHigh-k dielectrics
fei.scopus.subjectMetal gates
fei.scopus.subjectOutput conductances
fei.scopus.subjectVoltage gains
fei.scopus.subjectWork studies
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=57749170945&origin=inward
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