Brazilian facilities to study radiation effects in electronic devices

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dc.contributor.authorMEDINA, N.H.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorADDED, N.
dc.contributor.authorAGUIAR, V. A. P.
dc.contributor.authorAGUIRRE, F.
dc.contributor.authorRenato Giacomini
dc.contributor.authorMACCHIONE, E. L. A.
dc.contributor.authorDE MELO, M. A. A.
dc.contributor.authorOLIVEIRA, J. A.
dc.contributor.authorRoberto Santos
dc.contributor.authorSEIXAS, L. E.
dc.contributor.authorTABACNIKS, M. H.
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4395-8078
dc.date.accessioned2022-01-12T22:01:18Z
dc.date.available2022-01-12T22:01:18Z
dc.date.issued2013-09-27
dc.description.abstract© 2013 IEEE.Three facilities in Brazil are being prepared and upgraded to test and to qualify electronic devices regarding their tolerance to TID and SEE: a 60 kV X-ray source, a 1.7 MV Pelletron accelerator for low energy proton beams and an 8 MV Pelletron accelerator that produces heavy ion beams. MOSFET transistors were exposed to 10-keV X-rays and to 2.4 MeV protons extracted into air. During irradiation, characteristic curves were continuously measured to monitor the circuit's behavior relative to the accumulated dose. 12C, 16O, 28Si, 35Cl and 63Cu heavy ion beams were also used mostly to test the experimental setup, and verify beam uniformity at low fluence conditions, equilibrium charge state, and carbon stripper foil durability. To test the setup for SEE, a pMOS transistor was irradiated with 63 MeV 63Cu ions scattered at 15° by a 275 μg/cm2 gold foil. The setups are now available for TID and SEE studies in electronic devices.
dc.identifier.citationMEDINA, N.H.; GUAZZELLI, M. A.; ADDED, N.;AGUIAR, V. A. P.; AGUIRRE, F.; GIACOMINI, R.; MACCHIONE, E. L. A.;DE MELO, M. A. A.; OLIVEIRA, J. A.; SANTOS, R.;SEIXAS, L. E.; SEIXAS, L. E. Brazilian facilities to study radiation effects in electronic devices.Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, Sept. 2013.
dc.identifier.doi10.1109/RADECS.2013.6937368
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4058
dc.relation.ispartofProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
dc.rightsAcesso Restrito
dc.subject.otherlanguageProton and heavy ion beams
dc.subject.otherlanguageSingle event effect
dc.subject.otherlanguageTotal ionization dose
dc.subject.otherlanguageX-ray
dc.titleBrazilian facilities to study radiation effects in electronic devices
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84949926001
fei.scopus.subjectCharacteristic curve
fei.scopus.subjectElectronic device
fei.scopus.subjectLow-energy protons
fei.scopus.subjectMOSFET transistors
fei.scopus.subjectPelletron accelerators
fei.scopus.subjectpMOS transistors
fei.scopus.subjectSingle event effects
fei.scopus.subjectTotal ionization dose
fei.scopus.updated2023-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84949926001&origin=inward
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