The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation
dc.contributor.author | DE SOUZA FINO, LEONARDO NAVARENHO | |
dc.contributor.author | Gimenez, S. P. | |
dc.contributor.author | RENAUX, C. | |
dc.contributor.author | FLANDRE, DENIS | |
dc.contributor.author | GUAZZELLI DA SILVEIRA, MARCILEI APARECIDA | |
dc.date.accessioned | 2019-08-19T23:47:19Z | |
dc.date.available | 2019-08-19T23:47:19Z | |
dc.date.issued | 2015 | |
dc.description.firstpage | 43 | |
dc.description.issuenumber | 1 | |
dc.description.volume | 10 | |
dc.identifier.citation | DE SOUZA FINO, LEONARDO NAVARENHO; Gimenez, S. P.; RENAUX, C.; FLANDRE, DENIS; GUAZZELLI DA SILVEIRA, MARCILEI APARECIDA. The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 10, n. 1, p. 43, 2015. | |
dc.identifier.issn | 1807-1953 | |
dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/1463 | |
dc.relation.ispartof | JICS. Journal of Integrated Circuits and Systems (Ed. Português) | |
dc.rights | Acesso Restrito | |
dc.title | The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation | pt_BR |
dc.type | Artigo | pt_BR |