Carrier Mobility Variation Induced by the Substrate Bias in Ω-gate SOI Nanowire MOSFETs

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dc.contributor.authorBERGAMACHI, F. E.
dc.contributor.authorRIBEIRO, T. A.
dc.contributor.authorPAZ, B. C.
dc.contributor.authorMichelly De Souza
dc.contributor.authorBARRAUD, S.
dc.contributor.authorCASSE, M.
dc.contributor.authorVINET, M.
dc.contributor.authorFAYNOT, O.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:56:00Z
dc.date.available2022-01-12T21:56:00Z
dc.date.issued2019-10-17
dc.description.abstractthis work, an experimental analysis on the carrier mobility of p- and n-type Ω-gate SOI nanowire MOS transistors with different fin widths is done by varying substrate bias. Y-function method was used to extract mobility and its degradation coefficients. Differently from previously reported data from pMOS transistors, in which carrier mobility degrades with substrate bias increase, an improvement in carrier mobility is verified for n-type devices when back bias is increased from negative voltages up to 10V. However, by raising back bias up to 100V, causes carrier mobility degradation. Three-dimensional simulations confirmed this effect and showed that strong back bias attract the channel to the bottom interface, causing carrier confinement and, thus, increasing scattering mechanisms.
dc.identifier.citationBERGAMACHI, F. E.; RIBEIRO, T. A.; PAZ, B. C.; DE SOUZA, M.; BARRAUD, S.; CASSE, M.; FAYNOT, O.; PAVANELLO, M. A.Carrier Mobility Variation Induced by the Substrate Bias in Ω-gate SOI Nanowire MOSFETs. 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019, Oct. 2019.
dc.identifier.doi10.1109/S3S46989.2019.9320726
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3695
dc.relation.ispartof2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019
dc.rightsAcesso Restrito
dc.subject.otherlanguageMobility
dc.subject.otherlanguageNanowire
dc.subject.otherlanguageSOI MOSFET
dc.subject.otherlanguagesubstrate bias
dc.titleCarrier Mobility Variation Induced by the Substrate Bias in Ω-gate SOI Nanowire MOSFETs
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-85100848561
fei.scopus.subjectCarrier confinements
fei.scopus.subjectCarrier mobility degradation
fei.scopus.subjectDegradation coefficients
fei.scopus.subjectExperimental analysis
fei.scopus.subjectMobility variation
fei.scopus.subjectpMOS transistors
fei.scopus.subjectScattering mechanisms
fei.scopus.subjectThree dimensional simulations
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85100848561&origin=inward
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