Temperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengths

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dc.contributor.authorDE SOUZA, Michelly
dc.contributor.authorBULTEEL, Olivier
dc.contributor.authorFLANDRE, Denis
dc.contributor.authorPAVANELLO, Marcelo A.
dc.contributor.authorPavanello, Marcelo Antonio
dc.date.accessioned2019-08-19T23:45:10Z
dc.date.available2019-08-19T23:45:10Z
dc.date.issued2011
dc.description.firstpage107
dc.description.issuenumber2
dc.description.lastpage113
dc.description.volume6
dc.identifier.citationDE SOUZA, Michelly; BULTEEL, Olivier; FLANDRE, Denis; PAVANELLO, Marcelo A.; Pavanello, Marcelo Antonio. Temperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengths. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 6, n. 2, p. 107-113, 2011.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1089
dc.relation.ispartofJICS. Journal of Integrated Circuits and Systems (Ed. Português)
dc.rightsAcesso Restrito
dc.titleTemperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengthspt_BR
dc.typeArtigopt_BR
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