Low temperature and silicon thickness influences on the threshold voltage of double-gate MOSFETs considering a charge based extraction procedure

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dc.contributor.authorRodrigo Doria
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-01-12T22:04:30Z
dc.date.available2022-01-12T22:04:30Z
dc.date.issued2009-09-03
dc.description.abstractThis work studies the influence of the temperature and the fin width (silicon thickness) on the threshold voltage of lightly doped double-gate MOSFETs. The evaluation was performed using tridimensional simulations, device measurements and model. The threshold voltage was defined considering the classical double derivative method and a charge based one, and the results were compared to an analytical model. The charge based definition has shown a better concordance with the analytical model for the influence of both temperature and fin width. The surface potentials extracted at the threshold condition have also exhibited that the charge-based criterion for threshold voltage definition results in closer values to those expected analytically. The variation of the threshold voltage with the temperature is overestimated if it is extracted using the double derivative method in comparison to the charge-based one. Experimental results confirmed the predictions obtained through simulations and model. © The Electrochemical Society.
dc.description.firstpage605
dc.description.issuenumber1
dc.description.lastpage612
dc.description.volume23
dc.identifier.citationDORIA, R.; PAVANELLO, M. A. Low temperature and silicon thickness influences on the threshold voltage of double-gate MOSFETs considering a charge based extraction procedure. ECS Transactions, v. 23, n. 1, p. 605-612, Sept. 2009.
dc.identifier.doi10.1149/1.3183770
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4275
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleLow temperature and silicon thickness influences on the threshold voltage of double-gate MOSFETs considering a charge based extraction procedure
dc.typeArtigo de evento
fei.scopus.citations4
fei.scopus.eid2-s2.0-74549155810
fei.scopus.subjectAnalytical model
fei.scopus.subjectDerivative method
fei.scopus.subjectDouble-gate MOSFETs
fei.scopus.subjectExtraction procedure
fei.scopus.subjectFin widths
fei.scopus.subjectLow temperatures
fei.scopus.subjectSilicon thickness
fei.scopus.subjectThreshold condition
fei.scopus.subjectWork study
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=74549155810&origin=inward
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