Cryogenic operation of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs

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dc.contributor.authorPAZ, B. C.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorCASSE, M.
dc.contributor.authorBARRAUD, S.
dc.contributor.authorREIMBOLD, G.
dc.contributor.authorVINET, M.
dc.contributor.authorFAYNOT, O.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:57:23Z
dc.date.available2022-01-12T21:57:23Z
dc.date.issued2018-03-19
dc.description.abstractThis work evaluates the operation of p-type Si0.7Ge0.3-on-insulator (SGOI) nanowires from room temperature down to 5.2K. Electrical characteristics are shown for long channel devices comparing narrow Ω-gate to quasi-planar MOSFETs (wide fin width). Results show oscillations in both transconductance and gate to channel capacitance curves for temperatures smaller than 50K and fin width of 20nm due to quantum confinement effects. Improvement on the effective mobility for SGOI in comparison to SOI nanowires is still observed for devices with fin width scaled down to 20nm. Similar phonon-limited mobility contribution dependence on temperature is obtained for both narrow SGOI and SOI nanowires.
dc.description.firstpage1
dc.description.lastpage4
dc.description.volume2018-January
dc.identifier.citationPAZ, B. C.; PAVANELLO, M. A.; CASSE, M.; BARRAUD, S.; REIMBOLD, G.; VINET, M.; VINET, M.; FAYNOT, O. Cryogenic operation of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, p.1-4, 2018.
dc.identifier.doi10.1109/ULIS.2018.8354736
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3789
dc.relation.ispartof2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
dc.rightsAcesso Restrito
dc.subject.otherlanguageLow temperature
dc.subject.otherlanguageNanowire
dc.subject.otherlanguagepMOSFET
dc.subject.otherlanguageQuantum confinement
dc.subject.otherlanguageSGOI
dc.subject.otherlanguageSiGe
dc.subject.otherlanguageSOI
dc.subject.otherlanguageTransport
dc.titleCryogenic operation of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs
dc.typeArtigo de evento
fei.scopus.citations12
fei.scopus.eid2-s2.0-85050940671
fei.scopus.subjectLow temperatures
fei.scopus.subjectpMOSFET
fei.scopus.subjectSGOI
fei.scopus.subjectSiGe
fei.scopus.subjectTransport
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85050940671&origin=inward
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