Analysis of Variability in Transconductance and Mobility of Nanowire Transistors
N/D
Tipo de produção
Artigo de evento
Data de publicação
2022-08-22
Texto completo (DOI)
Periódico
36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
SILVA, L. M. B. DA
Marcelo Antonio Pavanello
CASSE, M.
BARRAUD, S.
VINET, M.
FAYNOT, O.
Michelly De Souza
Orientadores
Resumo
© 2022 IEEE.This work presents a comparison between the variability in junctionless nanowire transistors and inversion-mode nanowire transistors, looking at the transconductance, low-field mobility, linear and quadratic mobility degradation coefficients. To extract these parameters, the Y-Function method has been used. The obtained results shows differences in mobility and transconductance matching coefficients, indicating that mobility influence is not the only source of transconductance variation.
Citação
SILVA, L. M. B. DA; PAVANELLO, S. L. M. B. DA; BARRAUD, S.; VINET, M.; FAYNOT, O.; SOUZA, M. Analysis of Variability in Transconductance and Mobility of Nanowire Transistors. 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings, aug. 2022.
Palavras-chave
Keywords
Inversion-mode; Junctionless; Mobility; Nanowire Transistors; Variability
Assuntos Scopus
Degradation coefficients; Function methods; Inversion modes; Junctionless; Low field mobility; Matching coefficients; Mobility; Mobility degradation; Nanowire transistors; Variability