The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs
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2005-05-20
Autores
CAMILO, L. M.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
MARTINO, J. A.
SIMOEN, E.
CLAEYS, C.
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Proceedings - Electrochemical Society
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CAMILO, L. M.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs. Proceedings - Electrochemical Society, v. PV 2005-03, p. 119-124, mayo, 2005.
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The Zero Temperature Coefficient (ZTC) is observed experimentally in partially and fully depleted SOI MOSFET fabricated in a 0.13μm SOI CMOS technology. A simple model to study the behavior of gate voltage at ZTC (V ZTC) is proposed. The influence of the temperature mobility degradation in VZTC: is analyzed for PD and FD devices. Experimental results show that the temperature mobility degradation is larger in FD than in PD devices which is responsible for the VZTC decrement observed in FD instead of the increment observed in PD when the temperature increase. A good agreement is found in spite of the simplification used for VZTC model as a function of temperature.