The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs

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dc.contributor.authorCAMILO, L. M.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-8121-6513
dc.date.accessioned2023-08-26T23:50:37Z
dc.date.available2023-08-26T23:50:37Z
dc.date.issued2005-05-20
dc.description.abstractThe Zero Temperature Coefficient (ZTC) is observed experimentally in partially and fully depleted SOI MOSFET fabricated in a 0.13μm SOI CMOS technology. A simple model to study the behavior of gate voltage at ZTC (V ZTC) is proposed. The influence of the temperature mobility degradation in VZTC: is analyzed for PD and FD devices. Experimental results show that the temperature mobility degradation is larger in FD than in PD devices which is responsible for the VZTC decrement observed in FD instead of the increment observed in PD when the temperature increase. A good agreement is found in spite of the simplification used for VZTC model as a function of temperature.
dc.description.firstpage119
dc.description.lastpage124
dc.description.volumePV 2005-03
dc.identifier.citationCAMILO, L. M.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs. Proceedings - Electrochemical Society, v. PV 2005-03, p. 119-124, mayo, 2005.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5047
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleThe temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-31844443178
fei.scopus.subjectGate voltages
fei.scopus.subjectTemperature mobility coefficient
fei.scopus.subjectZero Temperature Coefficient (ZTC)
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=31844443178&origin=inward
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