Diamond layout style impact on SOI MOSFET in high temperature environment

Página do item simplificado
dc.contributor.authorGimenez S.P.
dc.contributor.authorGalembeck E.H.S.
dc.contributor.authorRenaux C.
dc.contributor.authorFlandre D.
dc.date.accessioned2019-08-19T23:45:30Z
dc.date.available2019-08-19T23:45:30Z
dc.date.issued2015
dc.description.abstract© 2015 Elsevier Ltd.This work performs an experimental comparative study between the Diamond (hexagonal gate geometry) and Standard layouts styles for Metal-Oxide-Semiconductor Field Effect Transistor in high temperatures environment. The devices were manufactured with the 1 μm Silicon-on-Insulator CMOS technology. The results demonstrate that the Diamond SOI MOSFET is capable to keep active the Longitudinal Corner Effect and the Parallel Association of MOSFET with Different Channel Lengths Effect in high temperature conditions and consequently to continue presenting a better electrical performance than the one found in the conventional SOI MOSFET.
dc.description.firstpage783
dc.description.issuenumber5
dc.description.lastpage788
dc.description.volume55
dc.identifier.citationGimenez, Salvador Pinillos; GALEMBECK, EGON HENRIQUE SALERNO; RENAUX, CHRISTIAN; FLANDRE, Denis. Diamond layout style impact on SOI MOSFET in high temperature environment. Microelectronics and Reliability, v. 55, n. 5, p. 783/MR11492-788, 2015.
dc.identifier.doi10.1016/j.microrel.2015.02.015
dc.identifier.issn0026-2714
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1318
dc.relation.ispartofMicroelectronics Reliability
dc.rightsAcesso Restrito
dc.subject.otherlanguageDiamond layout style
dc.subject.otherlanguageHigh temperature
dc.subject.otherlanguageLCE
dc.subject.otherlanguagePAMDLE
dc.titleDiamond layout style impact on SOI MOSFET in high temperature environment
dc.typeArtigo de evento
fei.scopus.citations22
fei.scopus.eid2-s2.0-84926244661
fei.scopus.subjectElectrical performance
fei.scopus.subjectHigh temperature
fei.scopus.subjectHigh temperature condition
fei.scopus.subjectHigh temperatures environment
fei.scopus.subjectHigh-temperature environment
fei.scopus.subjectLCE
fei.scopus.subjectPAMDLE
fei.scopus.subjectSilicon-on-insulator cmos
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84926244661&origin=inward
Arquivos
Coleções
Artigos