The Correlation between the NBTI Effect and the Surface Potential and Density of Interface Traps in Junctionless Nanowire Transistors

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dc.contributor.authorGRAZIANO JUNIOR, N.
dc.contributor.authorTREVISOLI, R.
dc.contributor.authorDORIA, R. T.
dc.date.accessioned2021-11-25T22:44:25Z
dc.date.available2021-11-25T22:44:25Z
dc.date.issued2020-07-31
dc.description.abstractThis paper discusses the nature of degradation by NBTI effect in MOS junctionless devices when varying the density of interface traps and surface potential. The data obtained in simulations are compared with results from physical devices and it is demonstrated how the quality of gate oxide affects the performance of such transistors, when the density of traps, the channel width, the doping concentration and the gate bias are varied.
dc.description.firstpage1
dc.description.issuenumber2
dc.description.lastpage5
dc.description.volume15
dc.identifier.citationGRAZIANO JUNIOR, N.; TREVISOLI, R.; DORIA, R. T. The Correlation between the NBTI Effect and the Surface Potential and Density of Interface Traps in Junctionless Nanowire Transistors. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, n. 2, p. 1-5, 2020.
dc.identifier.doi10.29292/jics.v15i2.196
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3480
dc.relation.ispartofJICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
dc.rightsAcesso Aberto
dc.rights.licenseOpen Journal Systems "Este é um artigo publicado em acesso aberto sob uma licença de código aberto (GPL v2). Fonte: https://jics.org.br/ojs/index.php/JICS/article/view/196. Acesso em: 25 nov. 2021.
dc.subjectJunctionless nanowire transistor
dc.subjectNBTI
dc.subjectDensity of interface traps
dc.subjectGap density
dc.subjectSurface potential
dc.titleThe Correlation between the NBTI Effect and the Surface Potential and Density of Interface Traps in Junctionless Nanowire Transistorspt_BR
dc.typeArtigopt_BR
fei.scopus.citations2
fei.scopus.eid2-s2.0-85090610040
fei.scopus.updated2023-09-01
fei.source.urlhttps://jics.org.br/ojs/index.php/JICS/article/view/196
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