Analysis of the leakage current in junctionless nanowire transistors

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dc.contributor.authorTrevisoli R.
dc.contributor.authorTrevisoli Doria R.
dc.contributor.authorDe Souza M.
dc.contributor.authorAntonio Pavanello M.
dc.date.accessioned2019-08-19T23:45:12Z
dc.date.available2019-08-19T23:45:12Z
dc.date.issued2013
dc.description.abstractThis letter presents an analysis of the leakage current in Junctionless Nanowire Transistors. The analysis is performed using experimental data together with three-dimensional numerical simulations. The influences of the temperature, device dimensions, and doping concentration have been studied. The results of inversion-mode devices of similar dimensions are also presented for comparison purpose. © 2013 AIP Publishing LLC.
dc.description.firstpage202103
dc.description.issuenumber20
dc.description.volume103
dc.identifier.citationSOUZA, Michelly de; TREVISOLI, Renan D.; DORIA, Rodrigo Trevisoli; PAVANELLO, Marcelo A.;PAVANELLO, M. A.;PAVANELLO, M.;PAVANELLO, M.A.;PAVANELLO, MARCELO;ANTONIO PAVANELLO, MARCELO. Analysis of the leakage current in junctionless nanowire transistors. Applied Physics Letters, v. 103, n. 20, p. 202103, 2013.
dc.identifier.doi10.1063/1.4829465
dc.identifier.issn0003-6951
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1122
dc.relation.ispartofApplied Physics Letters
dc.rightsAcesso Restrito
dc.titleAnalysis of the leakage current in junctionless nanowire transistors
dc.typeArtigo
fei.scopus.citations28
fei.scopus.eid2-s2.0-84889683041
fei.scopus.subjectDoping concentration
fei.scopus.subjectNanowire transistors
fei.scopus.subjectThree-dimensional numerical simulations
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84889683041&origin=inward
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