Harmonic distortion in symmetric and asymmetric self-cascodes of UTBB FD SOI planar MOSFETs
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2019-08-05
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D'OLIVEIRA, L. M.
KILCHYTSKA, V.
FLANDRE, D.
Michelly De Souza
KILCHYTSKA, V.
FLANDRE, D.
Michelly De Souza
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SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
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D'OLIVEIRA, L. M.; KILCHYTSKA, V.; FLANDRE, D.; DE SOUZA, M. Harmonic distortion in symmetric and asymmetric self-cascodes of UTBB FD SOI planar MOSFETs. SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices, aug. 2019.
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© 2019 IEEE.This paper presents an analysis of the harmonic distortion extracted from simulated results of symmetric and asymmetric self-cascode devices (S-SC and A-SC, respectively) composed by ultra-thin body and BOX fully depleted silicon-on-insulator planar MOSFETs 28 nm technological node. The results show that the A-SC effectively increases the operating drain current range for lower distortion. Comparisons with the literature show that the A-SC structures are a promising option for enhancing the circuit design flexibility for advanced MOSFETs.