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Harmonic distortion in symmetric and asymmetric self-cascodes of UTBB FD SOI planar MOSFETs

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Tipo de produção

Artigo de evento

Data de publicação

2019-08-05

Texto completo (DOI)

Periódico

SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices

Editor

Citações na Scopus

0

Autores

D'OLIVEIRA, L. M.
KILCHYTSKA, V.
FLANDRE, D.
Michelly De Souza

Orientadores

Resumo

© 2019 IEEE.This paper presents an analysis of the harmonic distortion extracted from simulated results of symmetric and asymmetric self-cascode devices (S-SC and A-SC, respectively) composed by ultra-thin body and BOX fully depleted silicon-on-insulator planar MOSFETs 28 nm technological node. The results show that the A-SC effectively increases the operating drain current range for lower distortion. Comparisons with the literature show that the A-SC structures are a promising option for enhancing the circuit design flexibility for advanced MOSFETs.

Citação

D'OLIVEIRA, L. M.; KILCHYTSKA, V.; FLANDRE, D.; DE SOUZA, M. Harmonic distortion in symmetric and asymmetric self-cascodes of UTBB FD SOI planar MOSFETs. SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices, aug. 2019.

Palavras-chave

Keywords

Analog Figures of Merit; Asymmetric Self-Cascode; Composite Transistor; Harmonic Distortion; SPICE Simulation; UTBB

Assuntos Scopus

Analog figures of merits; Composite transistors; Self-cascode; SPICE simulations; UTBB

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