Harmonic distortion in symmetric and asymmetric self-cascodes of UTBB FD SOI planar MOSFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2019-08-05
Texto completo (DOI)
Periódico
SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
D'OLIVEIRA, L. M.
KILCHYTSKA, V.
FLANDRE, D.
Michelly De Souza
Orientadores
Resumo
© 2019 IEEE.This paper presents an analysis of the harmonic distortion extracted from simulated results of symmetric and asymmetric self-cascode devices (S-SC and A-SC, respectively) composed by ultra-thin body and BOX fully depleted silicon-on-insulator planar MOSFETs 28 nm technological node. The results show that the A-SC effectively increases the operating drain current range for lower distortion. Comparisons with the literature show that the A-SC structures are a promising option for enhancing the circuit design flexibility for advanced MOSFETs.
Citação
D'OLIVEIRA, L. M.; KILCHYTSKA, V.; FLANDRE, D.; DE SOUZA, M. Harmonic distortion in symmetric and asymmetric self-cascodes of UTBB FD SOI planar MOSFETs. SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices, aug. 2019.
Palavras-chave
Keywords
Analog Figures of Merit; Asymmetric Self-Cascode; Composite Transistor; Harmonic Distortion; SPICE Simulation; UTBB
Assuntos Scopus
Analog figures of merits; Composite transistors; Self-cascode; SPICE simulations; UTBB