Influence of the intrinsic length on the behavior of PIN diodes fabricated on SOI substrates working as solar cells

Nenhuma Miniatura disponível
Citações na Scopus
2
Tipo de produção
Artigo de evento
Data
2018-10-26
Autores
SILVA, F.
Rodrigo Doria
Michelly De Souza
Orientador
Periódico
33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018
Título da Revista
ISSN da Revista
Título de Volume
Citação
SILVA, F.; DORIA. R.; DE SOUZA, M. Influence of the intrinsic length on the behavior of PIN diodes fabricated on SOI substrates working as solar cells. 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018, oct. 2018.
Texto completo (DOI)
Palavras-chave
Resumo
© 2018 IEEE.This work evaluates the influence of the intrinsic region length on the behavior of PIN diodes fabricated in the substrate of SOI wafers, operating as solar cells. The analysis has been performed in terms of efficiency and fill factor, fundamental parameters for the solar cell characterization. The studied cell has shown efficiency of about 7% to 8% and fill factor with average about 80%. Originally, ungated PIN devices have been considered in TCAD simulations. In the sequence, a gate has been placed over the intrinsic region of simulated devices and different biases (0V and 5V) were applied to compare the results with the ungated ones. Lastly, different operation temperatures have been applied into simulations, aiming to achieve results closer to real operation conditions.

Coleções