Analysis of the self-heating effect in UTBOX devices

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dc.contributor.authorRODRIGUES, M.
dc.contributor.authorCRUZ, E. O.
dc.contributor.authorMilene Galeti
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-2709-1734
dc.date.accessioned2022-01-12T22:02:49Z
dc.date.available2022-01-12T22:02:49Z
dc.date.issued2012-08-30
dc.description.abstractThis work presents a study of the self-heating effect (SHE) on -n type UTBOX devices. Thinner buried oxide indicated a reduction on degradation caused by the SH phenomenon as shown by drain current and transient time. Addressed to that, a smaller output conductance variation with the frequency was also related where a higher frequency is required for the SHE emergence. The ground plane region was also considered on the UTBOX devices indicating to be favorable in suppress the SHE. © The Electrochemical Society.
dc.description.firstpage153
dc.description.issuenumber1
dc.description.lastpage160
dc.description.volume49
dc.identifier.citationRODRIGUES, M.; CRUZ, E. O.; GALETI, M.; MARTINO, J. A. Analysis of the self-heating effect in UTBOX devices. ECS Transactions, v. 49, n. 1, p. 153- 160, 2012.
dc.identifier.doi10.1149/04901.0153ecst
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4161
dc.relation.ispartofECS Transactions
dc.rightsAcesso Aberto
dc.titleAnalysis of the self-heating effect in UTBOX devices
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84875831306
fei.scopus.subjectBuried oxides
fei.scopus.subjectGround planes
fei.scopus.subjectHigher frequencies
fei.scopus.subjectOutput conductance
fei.scopus.subjectSelf-heating effect
fei.scopus.subjectTransient time
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84875831306&origin=inward
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