Impact of halo implantation on 0.13 μm floating body partially depleted SOI n-MOSFETs in low temperature operation

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dc.contributor.authorPavanello M.A.
dc.contributor.authorMartino J.A.
dc.contributor.authorSimoen E.
dc.contributor.authorClaeys C.
dc.date.accessioned2019-08-19T23:45:08Z
dc.date.available2019-08-19T23:45:08Z
dc.date.issued2005
dc.description.abstractThis work studies the effect of halo implantation on the electrical characteristics of deep-submicrometer partially depleted SOI nMOSFETs during low temperature and floating body operation. Parameters such as the drain induced barrier lowering (DIBL) and the device thermal resistance have been investigated. It is shown that the combination of floating body operation with halo implantation degrades the DIBL in the temperature range studied (90 K-300 K) in comparison to devices that did not received this implantation. The halo region causes a more pronounced negative output conductance than for the transistors without a halo implantation. An estimation of the temperature rise for a given dissipated power in both types of devices is made, based on the thermal resistance, which is derived from the output characteristics in function of the temperature. © 2005 Elsevier Ltd. All rights reserved.
dc.description.firstpage1274
dc.description.issuenumber8
dc.description.lastpage1281
dc.description.volume49
dc.identifier.citationPAVANELLO, Marcelo A.; MARTINO, João Antonio; SIMOEN, Eddy; CLAEYS, Cor. Impact of halo implantation on 0.13?m floating body partially depleted SOI n-MOSFETs in low temperature operation. Solid-State Electronics, v. 49, n. 8, p. 1274-1281, 2005.
dc.identifier.doi10.1016/j.sse.2005.06.007
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1061
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageDIBL
dc.subject.otherlanguageLow temperature
dc.subject.otherlanguagePartially depleted
dc.subject.otherlanguageSelf-heating
dc.subject.otherlanguageSilicon-on-insulator
dc.subject.otherlanguageThermal resistance
dc.titleImpact of halo implantation on 0.13 μm floating body partially depleted SOI n-MOSFETs in low temperature operation
dc.typeArtigo
fei.scopus.citations5
fei.scopus.eid2-s2.0-24144468950
fei.scopus.subjectDIBL
fei.scopus.subjectHalo implantation
fei.scopus.subjectLow temperature
fei.scopus.subjectPartially depleted
fei.scopus.subjectSelf-heating
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=24144468950&origin=inward
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