Evaluation of triple-gate finfets with high-κ dielectrics and TiN gate material under analog operation
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2007-09-01
Autores
Marcelo Antonio Pavanello
Joao Antonio Martino
SIMOEN, E.
ROOYACKERS, R.
COLLAERT, N.
CLAEYS, C.
Joao Antonio Martino
SIMOEN, E.
ROOYACKERS, R.
COLLAERT, N.
CLAEYS, C.
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ECS Transactions
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PAVANELLO, M. A.; MARTINO, J. A.; SIMOEN, E.; ROOYACKERS, R.; COLLAERT, N.; CLAEYS, C. Evaluation of triple-gate finfets with high-κ dielectrics and TiN gate material under analog operation. ECS Transactions, v. 4, n. 1, p. 237-245, sept. 2007.
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This work presents the analog performance of nMOS and pMOS triple-gate FinFETs with high-κ dielectrics, TiN gate material and undoped body from DC measurements. Different fin widths and devices with and without halo implantation are explored. No halo FinFETs can achieve extremely large gain at similar channel length and improved unity gain frequency. The FinFETs with channel length of 110 nm achieved an intrinsic gain of 25 dB. Extremely large Early voltages have been measured on long channel nMOS and pMOS with relatively wide fins compared to the results usually reported in the literature. The large Early voltage obtained suggests the devices are in the onset of volume inversion phenomena due to the low doping level of the device body. © 2006 The Electrochemical Society.