The low-frequency noise behaviour of graded-channel SOI nMOSFETs

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dc.contributor.authorSimoen E.
dc.contributor.authorClaeys C.
dc.contributor.authorChung T.M.
dc.contributor.authorFlandre D.
dc.contributor.authorPavanello M.A.
dc.contributor.authorMartino J.A.
dc.contributor.authorRaskin J.-P.
dc.date.accessioned2019-08-19T23:45:08Z
dc.date.available2019-08-19T23:45:08Z
dc.date.issued2007
dc.description.abstractIt is shown that the low-frequency noise in graded-channel (GC) SOI nMOSFETs is generally of the flicker or 1/f noise type. The corresponding input-referred noise spectral density is markedly higher than for the conventional uniformly doped or the intrinsic un-doped fully depleted n-channel SOI transistors. However, this increase can only be partially explained by the effective channel length reduction provided by the lightly doped region of the GC structure. It is furthermore demonstrated that the underlying noise mechanism for the GC structures is rather related to carrier number fluctuations compared with mobility fluctuations for the intrinsic or the uniformly doped fully depleted device. It is concluded that for optimal analog performance of GC SOI nMOSFETs, high gain has to be traded off for higher 1/f noise. © 2007 Elsevier Ltd. All rights reserved.
dc.description.firstpage260
dc.description.issuenumber2
dc.description.lastpage267
dc.description.volume51
dc.identifier.citationSIMOEN, Eddy; CLAEYS, Cor; CHUNG, Tsu Ming; FLANDRE, Denis; PAVANELLO, Marcelo A.; MARTINO, João Antonio; RASKIN, Jean Pierre. The low-frequency noise behaviour of graded-channel SOI nMOSFETs. Solid-State Electronics, v. 51, n. 2, p. 260-267, 2007.
dc.identifier.doi10.1016/j.sse.2007.01.003
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1068
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalog performance
dc.subject.otherlanguageGraded-channel SOI MOSFET
dc.subject.otherlanguageLow-frequency noise
dc.subject.otherlanguageMobility fluctuations
dc.subject.otherlanguageNumber fluctuations
dc.titleThe low-frequency noise behaviour of graded-channel SOI nMOSFETs
dc.typeArtigo
fei.scopus.citations15
fei.scopus.eid2-s2.0-33847274701
fei.scopus.subjectAnalog performance
fei.scopus.subjectGraded channel SOI MOSFET
fei.scopus.subjectLow frequency noise
fei.scopus.subjectMobility fluctuations
fei.scopus.subjectNumber fluctuations
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33847274701&origin=inward
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