Reliability performance characterization of SOI FinFets

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dc.contributor.authorCLAEYS, C.
dc.contributor.authorPUT, S.
dc.contributor.authorRAFI, J. M.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.date.accessioned2022-01-12T22:04:19Z
dc.date.available2022-01-12T22:04:19Z
dc.date.issued2009-06-02
dc.description.abstractFinFET devices are explicitly mentioned in the ITRS roadmap and have a good potential for scaling CMOS to 22 nm and below. Some physical characterization and reliability aspects of these devices are reviewed. Attention is given to transient floating body effects and low frequency noise, which may yield information on the materials' characteristics like carrier recombination lifetime or interface and oxide trap density. These methods can be useful to study the performance of these components under harsh operation conditions of low or high temperature, or at high bias voltages. ©2009 IEEE.
dc.identifier.citationCLAEYS, C.; PUT, S.; RAFI, J. M.; PAVANELLO, M. A.; MARTINO, J. A.; SIMOEN, E. Reliability performance characterization of SOI FinFets. 2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09. Jun. 2022.
dc.identifier.doi10.1109/EDST.2009.5166090
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4263
dc.relation.ispartof2009 2nd International Workshop on Electron Devices and Semiconductor Technology, IEDST '09
dc.rightsAcesso Restrito
dc.subject.otherlanguageDrain current transients
dc.subject.otherlanguageFinFets
dc.subject.otherlanguageLow-frequency noise
dc.subject.otherlanguageMuGFETs
dc.subject.otherlanguageSOI
dc.titleReliability performance characterization of SOI FinFets
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-77949901490
fei.scopus.subjectCarrier recombination
fei.scopus.subjectDrain current transient
fei.scopus.subjectFinFET devices
fei.scopus.subjectFinFETs
fei.scopus.subjectFloating body effect
fei.scopus.subjectHigh temperature
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectOperation conditions
fei.scopus.subjectOxide trap density
fei.scopus.subjectPhysical characterization
fei.scopus.subjectReliability performance
fei.scopus.subjectRoadmap
fei.scopus.subjectSOI FinFETs
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=77949901490&origin=inward
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