Gated SiGe PIN diodes exposed to visible light spectrum and heavy-ion radiation

Página do item simplificado
dc.contributor.authorBÜHLER, Rudolf Theoderich
dc.contributor.authorNOVO, C. D.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorRenato Giacomini
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-7934-9605
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1060-2649
dc.date.accessioned2022-01-12T21:59:04Z
dc.date.available2022-01-12T21:59:04Z
dc.date.issued2016-01-27
dc.description.abstract© 2016 IEEE.This paper studies gated PIN diodes designed at Centro Universitário da FEI and fabricated at Global Foundries in the GF0.13 technology, using SiGe substrate and four gate setups. The analysis is made through experimental measurements and numerical simulations of PIN diodes in dark condition, illuminated with visible light or exposed to heavy-ion radiation. Particle beam radiation present in hazard environments may cause circuit malfunctions due to interference in the device response. This paper conducts a brief, but depth study of how these variables impact the PIN diode performance, important to space and sensor applications.
dc.description.firstpage186
dc.description.lastpage189
dc.identifier.citationBÜHLER, R. T.; NOVO, C. D.; GUAZZELLI, M. A.; GIACOMINI, R.Gated SiGe PIN diodes exposed to visible light spectrum and heavy-ion radiation. 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016, Jan. p. 186-189, 2016.
dc.identifier.doi10.1109/ULIS.2016.7440084
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3904
dc.relation.ispartof2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
dc.rightsAcesso Restrito
dc.subject.otherlanguageHeavy-Ion
dc.subject.otherlanguageNumerical Simulation
dc.subject.otherlanguagePIN diode
dc.subject.otherlanguageVisible Light
dc.titleGated SiGe PIN diodes exposed to visible light spectrum and heavy-ion radiation
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84966431253
fei.scopus.subjectDark conditions
fei.scopus.subjectDevice response
fei.scopus.subjectExposed to
fei.scopus.subjectIon radiation
fei.scopus.subjectPiN diode
fei.scopus.subjectSensor applications
fei.scopus.subjectSiGe substrates
fei.scopus.subjectVisible light
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84966431253&origin=inward
Arquivos
Coleções
Artigos