Influence of interface traps density and temperature variation on the NBTI effect in p-Type junctionless nanowire transistors

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dc.contributor.authorGRAZIANO, N.
dc.contributor.authorCOSTA, F. J.
dc.contributor.authorTREVISOLI, R.
dc.contributor.authorBARRAUD, S.
dc.contributor.authorRodrigo Doria
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-01-12T21:53:30Z
dc.date.available2022-01-12T21:53:30Z
dc.date.issued2021-12-05
dc.description.abstract© 2021 Elsevier LtdThis paper deals with the behavior of degradation by NBTI effect in pMOS junctionless nanowire transistors (JNTs). The analysis has been performed through measurements followed by 3D numerical simulations and has shown that the increase in the oxygen precursors density close to the interface leads to the reduction of the saturation in the NBTI effect when the devices operate in partial depletion regime. Such effect can be associated to the change in the flatband voltage to more negative values as well as the threshold voltage with the increase in the precursor density. In the sequence of the work, it was shown that, as the operation temperature rises, there is an increase in the degradation of the threshold voltage due to NBTI, which is more pronounced for larger gate voltages. It was concluded that this effect could be associated to the increase in the recombination rate with the temperature, which enables the occupation of a larger amount of traps.
dc.description.volume186
dc.identifier.citationGRAZIANO, N.; COSTA, F. J.; TREVISOLI, R.; BARRAUD, S.; DORIA, R. Influence of interface traps density and temperature variation on the NBTI effect in p-Type junctionless nanowire transistors. Solid-State Electronics, v. 186, 2021.
dc.identifier.doi10.1016/j.sse.2021.108097
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3546
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageDensity of interface traps
dc.subject.otherlanguageJunctionless nanowire transistor
dc.subject.otherlanguageNBTI
dc.subject.otherlanguageTemperature
dc.titleInfluence of interface traps density and temperature variation on the NBTI effect in p-Type junctionless nanowire transistors
dc.typeArtigo
fei.scopus.citations4
fei.scopus.eid2-s2.0-85108698381
fei.scopus.subject3-D numerical simulation
fei.scopus.subjectFlat-band voltage
fei.scopus.subjectNanowire transistors
fei.scopus.subjectOperation temperature
fei.scopus.subjectOxygen precursors
fei.scopus.subjectPartial depletion
fei.scopus.subjectRecombination rate
fei.scopus.subjectTemperature variation
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85108698381&origin=inward
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