Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs

N/D

Tipo de produção

Artigo de evento

Data de publicação

2005-09-07

Periódico

Proceedings - Electrochemical Society

Editor

Citações na Scopus

0

Autores

BELLODI, M.
MARTINO, J. A.

Orientadores

Resumo

Experimental and simulations analyzes were done in Graded-Channel (GC) SOI nMOSFETs in order to study the drain leakage current behavior in these devices when operating from room temperature (300K) up to 573K. It was noticed that drain leakage current depends strongly on the ratio between the length of the lowly doped region and the mask channel length. All discussions presented are based on experimental and numerical bidimensional simulations results.

Citação

BELLODI, M.; MARTINO, J. A. Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. Proceedings - Electrochemical Society, v. PV 2005-08, p. 548-556, sept. 2005.

Palavras-chave

Keywords

Assuntos Scopus

Bidimensional simulations; Drain leakage current; Room temperature

Avaliação

Revisão

Suplementado Por

Referenciado Por