Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2005-09-07
Periódico
Proceedings - Electrochemical Society
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
BELLODI, M.
MARTINO, J. A.
Orientadores
Resumo
Experimental and simulations analyzes were done in Graded-Channel (GC) SOI nMOSFETs in order to study the drain leakage current behavior in these devices when operating from room temperature (300K) up to 573K. It was noticed that drain leakage current depends strongly on the ratio between the length of the lowly doped region and the mask channel length. All discussions presented are based on experimental and numerical bidimensional simulations results.
Citação
BELLODI, M.; MARTINO, J. A. Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. Proceedings - Electrochemical Society, v. PV 2005-08, p. 548-556, sept. 2005.
Palavras-chave
Keywords
Assuntos Scopus
Bidimensional simulations; Drain leakage current; Room temperature