Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs

Página do item simplificado
dc.contributor.authorBELLODI, M.
dc.contributor.authorMARTINO, J. A.
dc.date.accessioned2023-08-26T23:50:45Z
dc.date.available2023-08-26T23:50:45Z
dc.date.issued2005-09-07
dc.description.abstractExperimental and simulations analyzes were done in Graded-Channel (GC) SOI nMOSFETs in order to study the drain leakage current behavior in these devices when operating from room temperature (300K) up to 573K. It was noticed that drain leakage current depends strongly on the ratio between the length of the lowly doped region and the mask channel length. All discussions presented are based on experimental and numerical bidimensional simulations results.
dc.description.firstpage548
dc.description.lastpage556
dc.description.volumePV 2005-08
dc.identifier.citationBELLODI, M.; MARTINO, J. A. Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. Proceedings - Electrochemical Society, v. PV 2005-08, p. 548-556, sept. 2005.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5055
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleTemperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-31744433623
fei.scopus.subjectBidimensional simulations
fei.scopus.subjectDrain leakage current
fei.scopus.subjectRoom temperature
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=31744433623&origin=inward
Arquivos
Coleções
Artigo de evento