Modeling Quantum Confinement in Multi-Gate Transistors with Effective Potential

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dc.contributor.authorSOARES, C. S.
dc.contributor.authorBAIKADI, P. K. R.
dc.contributor.authorROSSETO, A. C. J.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorVASILESKA, D.
dc.contributor.authorWIRTH, G. I.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-11-01T06:04:28Z
dc.date.available2022-11-01T06:04:28Z
dc.date.issued2022
dc.description.abstract© 2022 IEEE.Particle-based Monte Carlo device simulators are an efficient tool to investigate the performance and reliability of transistors. The semiclassical theoretical model employed in the Monte Carlo device simulator is unsuccessful to describe some aspects of the multi-gate transistors that come from the quantum behavior of charge carriers. To take into consideration the space-quantization effects in these simulators, a quantum correction is necessary. We propose to include an effective potential in the Monte Carlo device simulator to address the wave-like behavior of electrons in n-type silicon FinFET and n-type silicon nanowire transistors. The effective potential has a unique parameter, which can be adjusted to find a line density using an Effective Potential-Poisson solver that matches with the line density calculated using a Schrodinger-Poisson solver. We demonstrated that using the effective potential model, the effect of the electron confinement is well described.
dc.identifier.citationSOARES, C. S.; BAIKADI, P. K. R.; ROSSETO, A. C. J.; PAVANELLO, M. A.; VASILESKA, D.; WIRTH, G. I. Modeling Quantum Confinement in Multi-Gate Transistors with Effective Potential. 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings, Aug. 2022.
dc.identifier.doi10.1109/SBMICRO55822.2022.9881047
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4631
dc.relation.ispartof36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings
dc.rightsAcesso Restrito
dc.subject.otherlanguageeffective potential
dc.subject.otherlanguageFinFET
dc.subject.otherlanguagenanowire transistors
dc.subject.otherlanguagequantum confinement
dc.titleModeling Quantum Confinement in Multi-Gate Transistors with Effective Potential
dc.typeArtigo de evento
fei.scopus.citations3
fei.scopus.eid2-s2.0-85139186418
fei.scopus.subjectDevice simulators
fei.scopus.subjectEffective potentials
fei.scopus.subjectLine density
fei.scopus.subjectMultigate transistors
fei.scopus.subjectN type silicon
fei.scopus.subjectNanowire transistors
fei.scopus.subjectPerformance and reliabilities
fei.scopus.subjectPoisson solvers
fei.scopus.subjectQuantum behaviors
fei.scopus.subjectTheoretical modeling
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85139186418&origin=inward
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