Back-Biased Undoped Nanowire-Based FETs in Silicon-On-Insulator Substrates with Nanometric Thicknesses

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dc.contributor.authorNEMER, Juliana P.
dc.contributor.authorPUYDINGER, M.
dc.contributor.authorDINIZ, José Alexandre
dc.contributor.authorPAVANELLO, Marcelo A.
dc.date.accessioned2019-08-19T23:45:13Z
dc.date.available2019-08-19T23:45:13Z
dc.date.issued2018
dc.description.firstpage178
dc.description.lastpage182
dc.description.volume13
dc.identifier.citationNEMER, Juliana P.; PUYDINGER, M.; DINIZ, José Alexandre; PAVANELLO, Marcelo A.. Back-Biased Undoped Nanowire-Based FETs in Silicon-On-Insulator Substrates with Nanometric Thicknesses. Journal of Nanoelectronics and Optoelectronics, v. 13, p. 178-182, 2018.
dc.identifier.doi10.1166/jno.2018.2228
dc.identifier.issn1555-130X
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1130
dc.relation.ispartofJournal of Nanoelectronics and Optoelectronics
dc.rightsAcesso Restrito
dc.titleBack-Biased Undoped Nanowire-Based FETs in Silicon-On-Insulator Substrates with Nanometric Thicknessespt_BR
dc.typeArtigopt_BR
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