Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors

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dc.contributor.authorCerdeira A.
dc.contributor.authorEstrada M.
dc.contributor.authorIniguez B.
dc.contributor.authorTrevisoli R.D.
dc.contributor.authorDoria R.T.
dc.contributor.authorDe Souza M.
dc.contributor.authorPavanello M.A.
dc.date.accessioned2019-08-19T23:45:11Z
dc.date.available2019-08-19T23:45:11Z
dc.date.issued2013
dc.description.abstractA new charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors (SDGJLTM) is proposed and validated with simulations for doping concentrations of 5 × 1018 and 1 × 10 19 cm-3, as well as for layer thicknesses of 10, 15 and 20 nm. The model is physically-based, considering both the depletion and accumulation operating conditions. Most model parameters are related to physical magnitudes, and the extraction procedure for each of them is well established. The model provides an accurate description of the transistor behavior in all operating conditions. Among important advantages with respect to previous models are the inclusion of the effect of the series resistance and the fulfilment of the requirement of being symmetrical with respect to Vd = 0 V. © 2013 Elsevier Ltd. All rights reserved.
dc.description.firstpage59
dc.description.lastpage63
dc.description.volume85
dc.identifier.citationCERDEIRA, Antonio; CUETO, Magali Estrada; INIGUEZ, Benjamin; TREVISOLI, Renan Doria; DORIA, Rodrigo Trevisoli; DE SOUZA, Michelly; Pavanello, Marcelo Antonio. Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors. Solid-State Electronics, v. 85, p. 59-63, 2013.
dc.identifier.doi10.1016/j.sse.2013.03.008
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1100
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Restrito
dc.subject.otherlanguageAccumulation JLT
dc.subject.otherlanguageDepletion JLT
dc.subject.otherlanguageDouble-Gate
dc.subject.otherlanguageJLT
dc.subject.otherlanguageJunctionless
dc.subject.otherlanguageJunctionless transistor
dc.subject.otherlanguageTransistor model
dc.titleCharge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors
dc.typeArtigo
fei.scopus.citations38
fei.scopus.eid2-s2.0-84877286775
fei.scopus.subjectAccumulation JLT
fei.scopus.subjectDepletion JLT
fei.scopus.subjectDouble-gate
fei.scopus.subjectJLT
fei.scopus.subjectJunctionless
fei.scopus.subjectJunctionless transistors
fei.scopus.subjectTransistor model
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84877286775&origin=inward
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