Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET

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dc.contributor.authorPAIOLA, A. G.
dc.contributor.authorNICOLETT, A. S.
dc.contributor.authorMARTINO, J. A.
dc.date.accessioned2023-08-26T23:50:46Z
dc.date.available2023-08-26T23:50:46Z
dc.date.issued2005-09-05
dc.description.abstractThis work analyzes the influence of the gate oxide tunneling current on the extraction of the silicon film and front oxide thickness on deep submicrometer fully depleted SOI nMOSFET devices. Numerical bidimensional simulations to support the analysis and experimental measurements were done using 0.13 μm SOI CMOS technology.
dc.description.firstpage529
dc.description.lastpage537
dc.description.volumePV 2005-08
dc.identifier.citationPAIOLA, A. G.; NICOLETT, A. S.; MARTINO, J. A. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. Proceedings - Electrochemical Society, v. PV 2005-08, p. 529-537, sept. 2005.
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5056
dc.relation.ispartofProceedings - Electrochemical Society
dc.rightsAcesso Restrito
dc.titleInfluence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-31744432720
fei.scopus.subjectGate oxide tunnelling current
fei.scopus.subjectSilicon film
fei.scopus.subjectSubmicrometer
fei.scopus.updated2024-12-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=31744432720&origin=inward
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